ELECTRONIC MATERIALS
Electronic Chemicals
High-grade electronic chemicals for integrated circuits, display panels and advanced semiconductor manufacturing processes.
ELECTRONIC CHEMICALS
Electronic Chemical Product Range
Electronic-grade process chemicals for integrated circuits, semiconductor manufacturing and display panel applications, with UPSSS grade options.
HF
Electronic Grade Hydrofluoric Acid
ELECTRONIC CHEMICAL · 01
Electronic Grade Hydrofluoric Acid
电子级氢氟酸
Ingredient
HF
Grade
UPSSS
Application
Integrated Circuit
H₃PO₄
Electronic Grade Phosphoric Acid
ELECTRONIC CHEMICAL · 02
Electronic Grade Phosphoric Acid
电子级磷酸
Ingredient
H₃PO₄
Grade
UPSSS
Application
Integrated Circuit, Display Panel
H₂SO₄
Electronic Sulfuric Acid
ELECTRONIC CHEMICAL · 03
Electronic Sulfuric Acid
电子级硫酸
Ingredient
H₂SO₄
Grade
UPSSS
Application
Integrated Circuit, Display Panel
H₂O₂
Electronic Grade Hydrogen Peroxide
ELECTRONIC CHEMICAL · 04
Electronic Grade Hydrogen Peroxide
电子级双氧水
Ingredient
H₂O₂
Grade
UPSSS
Application
Integrated Circuit
HCl
Electronic Grade Hydrochloric Acid
ELECTRONIC CHEMICAL · 05
Electronic Grade Hydrochloric Acid
电子级盐酸
Ingredient
HCl
Grade
UPSSS
Application
Integrated Circuit
NH₄OH
Electronic Grade Ammonia
ELECTRONIC CHEMICAL · 06
Electronic Grade Ammonia
电子级氨水
Ingredient
NH₄OH
Grade
UPSSS
Application
Integrated Circuit
IPA
Electronic Grade Isopropyl Alcohol
ELECTRONIC CHEMICAL · 07
Electronic Grade Isopropyl Alcohol
电子级异丙醇
Ingredient
IPA
Grade
UPSSS
Application
Integrated Circuit
BOE
Buffer Etching Solution
ELECTRONIC CHEMICAL · 08
Buffer Etching Solution
缓冲刻蚀液
Ingredient
BOE
Grade
UPSSS
Application
Integrated Circuit
NH₄F
Ammonium Fluoride
ELECTRONIC CHEMICAL · 09
Ammonium Fluoride
氟化铵
Ingredient
NH₄F
Grade
UPSSS
Application
Integrated Circuit
Poly-Si
Etching Solution
ELECTRONIC CHEMICAL · 10
Etching Solution
刻蚀液
Ingredient
Poly-Si
Grade
UPSSS
Application
Integrated Circuit
HFE-347
Hydrofluoroether
ELECTRONIC CHEMICAL · 11
Hydrofluoroether
氢氟醚
Ingredient
HFE-347
Grade
UPSSS
Application
Integrated Circuit
TEOS
Silicontetraacetate
ELECTRONIC CHEMICAL · 12
Silicontetraacetate
正硅酸四乙酯
Ingredient
TEOS
Grade
UPSSS
Application
Integrated Circuit
TMP
Trimethyl Phosphite
ELECTRONIC CHEMICAL · 13
Trimethyl Phosphite
亚磷酸三甲酯
Ingredient
TMP
Grade
UPSSS
Application
Integrated Circuit
TEB
Triethyl Borate
ELECTRONIC CHEMICAL · 14
Triethyl Borate
硼酸三乙酯
Ingredient
TEB
Grade
UPSSS
Application
Integrated Circuit
TMB
Trimethyl Borate
ELECTRONIC CHEMICAL · 15
Trimethyl Borate
硼酸三甲酯
Ingredient
TMB
Grade
UPSSS
Application
Integrated Circuit
TEPO
Triethyl Phosphate
ELECTRONIC CHEMICAL · 16
Triethyl Phosphate
磷酸三乙酯
Ingredient
TEPO
Grade
UPSSS
Application
Integrated Circuit
TMPO
Trimethyl Phosphate
ELECTRONIC CHEMICAL · 17
Trimethyl Phosphate
磷酸三甲酯
Ingredient
TMPO
Grade
UPSSS
Application
Integrated Circuit
DCE
Trans-1,2-Dichloroethylen
ELECTRONIC CHEMICAL · 18
Trans-1,2-Dichloroethylen
1,2-反-二氯乙烯
Ingredient
DCE
Grade
UPSSS
Application
Integrated Circuit
POCl₃
Phosphorus Oxychloride
ELECTRONIC CHEMICAL · 19
Phosphorus Oxychloride
三氯氧磷
Ingredient
POCl₃
Grade
UPSSS
Application
Integrated Circuit
BBr₃
Boron Tribromide
ELECTRONIC CHEMICAL · 20
Boron Tribromide
三溴化硼
Ingredient
BBr₃
Grade
UPSSS
Application
Integrated Circuit
TaCl₅
Tantalum Pentachloride
ELECTRONIC CHEMICAL · 21
Tantalum Pentachloride
五氯化钽
Ingredient
TaCl₅
Grade
99.995%, 99.9995%
Application
Integrated Circuit, CVD/ALD
NbCl₅
Niobium Pentachloride
ELECTRONIC CHEMICAL · 22
Niobium Pentachloride
五氯化铌
Ingredient
NbCl₅
Grade
99.9%, 99.995%
Application
Integrated Circuit, CVD/ALD
MoCl₅
Molybdenum Pentachloride
ELECTRONIC CHEMICAL · 23
Molybdenum Pentachloride
五氯化钼
Ingredient
MoCl₅
Grade
99.9%, 99.99%
Application
Integrated Circuit, CVD/ALD
HfCl₄
Hafnium Tetrachloride
ELECTRONIC CHEMICAL · 24
Hafnium Tetrachloride
四氯化铪
Ingredient
HfCl₄
Grade
99.995%, 99.999%, Zr≤0.01%/Zr≤0.5%
Application
Integrated Circuit
ZrCl₄
Zirconium Tetrachloride
ELECTRONIC CHEMICAL · 25
Zirconium Tetrachloride
四氯化锆
Ingredient
ZrCl₄
Grade
99.95%, Hf≤50ppm
Application
Integrated Circuit, CVD/ALD
MoO₂Cl₂
Molybdenum Dichloride Dioxide
ELECTRONIC CHEMICAL · 26
Molybdenum Dichloride Dioxide
二氯二氧化钼
Ingredient
MoO₂Cl₂
Grade
99.999%
Application
Semiconductor Film Precursors
VOCl₃
Vanadium Oxychloride
ELECTRONIC CHEMICAL · 27
Vanadium Oxychloride
三氯氧钒
Ingredient
VOCl₃
Grade
97%, 99.9%
Application
Semiconductor, Film Materials
VCl₄
Vanadium Tetrachloride
ELECTRONIC CHEMICAL · 28
Vanadium Tetrachloride
四氯化钒
Ingredient
VCl₄
Grade
99.9%
Application
Film Deposition Precursors
VCl₃
Vanadium Trichloride
ELECTRONIC CHEMICAL · 29
Vanadium Trichloride
三氯化钒
Ingredient
VCl₃
Grade
99.5%
Application
Semiconductor Materials
CrCl₃
Chromium Trichloride
ELECTRONIC CHEMICAL · 30
Chromium Trichloride
无水三氯化铬
Ingredient
CrCl₃
Grade
99.5%
Application
Film Deposition Precursor
HfOCl₂·8H₂O
Hafnium Dichloride Oxide Octahydrate
ELECTRONIC CHEMICAL · 31
Hafnium Dichloride Oxide Octahydrate
八水合二氯氧化铪
Ingredient
HfOCl₂·8H₂O
Grade
99.9%, 99.999%
Application
Integrated Circuit
TaCl₅
Tantalum Pentachloride n-butanol Solution
ELECTRONIC CHEMICAL · 32
Tantalum Pentachloride n-butanol Solution
五氯化钽正丁醇溶液
Ingredient
TaCl₅ – n-Butanol
Grade
200g±1/L
Application
Semiconductor Liquid-phase Precursors
Ta(OC₂H₅)₅
Tantalum(5+) Ethanolate
ELECTRONIC CHEMICAL · 33
Tantalum(5+) Ethanolate
乙醇钽
Ingredient
Ta(OC₂H₅)₅
Grade
99.99%
Application
ALD/CVD Tantalum Film Precursor
Nb(OC₂H₅)₅
Niobium(5+) Ethanolate
ELECTRONIC CHEMICAL · 34
Niobium(5+) Ethanolate
乙醇铌
Ingredient
Nb(OC₂H₅)₅
Grade
99.99%
Application
ALD/CVD Niobium Film Precursor
Co₂(CO)₈
Cobalt Carbonyl
ELECTRONIC CHEMICAL · 35
Cobalt Carbonyl
八羰基二钴
Ingredient
Co₂(CO)₈
Grade
98.5%
Application
Integrated Circuit Metal Cobalt Film Precursor
W(CO)₆
Tungsten Hexacarbonyl
ELECTRONIC CHEMICAL · 36
Tungsten Hexacarbonyl
六羰基钨
Ingredient
W(CO)₆
Grade
99%, 99.99%
Application
Semiconductor Tungsten Metallization Precursor
Mo(CO)₆
Molybdenum Hexacarbonyl
ELECTRONIC CHEMICAL · 37
Molybdenum Hexacarbonyl
六羰基钼
Ingredient
Mo(CO)₆
Grade
99%, 99.999%
Application
Molybdenum Film Deposition Precursor
Cr(CO)₆
Chromium Hexacarbonyl
ELECTRONIC CHEMICAL · 38
Chromium Hexacarbonyl
六羰基铬
Ingredient
Cr(CO)₆
Grade
99%, 99.999%
Application
Chromium Film Deposition Precursor
Ru₃(CO)₁₂
Triruthenium Dodecacarbonyl
ELECTRONIC CHEMICAL · 39
Triruthenium Dodecacarbonyl
十二羰基三钌
Ingredient
Ru₃(CO)₁₂
Grade
99%
Application
Ruthenium Film Precursors for Integrated Circuits
(C₅H₅)₂ZrCl₂
Zirconocene Dichloride
ELECTRONIC CHEMICAL · 40
Zirconocene Dichloride
二氯二茂锆
Ingredient
(C₅H₅)₂ZrCl₂
Grade
98%
Application
Semiconductor, Catalytic Precursor
C₁₀H₁₀Cl₂Ti
Titanocene Dichloride
ELECTRONIC CHEMICAL · 41
Titanocene Dichloride
二氯二茂钛
Ingredient
C₁₀H₁₀Cl₂Ti
Grade
99%
Application
Film Deposition Precursors
C₁₀H₁₀Cl₂Hf
Hafnocene Dichloride
ELECTRONIC CHEMICAL · 42
Hafnocene Dichloride
二氯二茂铪
Ingredient
C₁₀H₁₀Cl₂Hf
Grade
98%
Application
Hafnium-based Thin Film Precursors
Ta₂O₅
Tantalic Oxide
ELECTRONIC CHEMICAL · 43
Tantalic Oxide
五氧化二钽
Ingredient
Ta₂O₅
Grade
99.9%, 99.99%
Application
Optical and Semiconductor Dielectric Films
Nb₂O₅
Niobium(V) Oxide
ELECTRONIC CHEMICAL · 44
Niobium(V) Oxide
五氧化二铌
Ingredient
Nb₂O₅
Grade
99.9%, 99.99%
Application
Semiconductor and Optical Film Materials
MoO₂
Molybdenum Dioxide
ELECTRONIC CHEMICAL · 45
Molybdenum Dioxide
二氧化钼
Ingredient
MoO₂
Grade
99.95%
Application
Conductive Films, Semiconductor Materials
MoO₃
Molybdenum Trioxide
ELECTRONIC CHEMICAL · 46
Molybdenum Trioxide
三氧化钼
Ingredient
MoO₃
Grade
99.95%
Application
Semiconductor Films, Optoelectronic Materials
HfO₂
Hafnium(IV) Oxide
ELECTRONIC CHEMICAL · 47
Hafnium(IV) Oxide
二氧化铪
Ingredient
HfO₂
Grade
99.9%, 99.99%
Application
High-k Gate Dielectric Materials for Integrated Circuits